D5.1. – Electrical characterization of LPE derived novel materials

Prior to evaluation of excellent electronic properties of macroscale printed devices, individual nanosheets must be assessed first because it tends to be limited by quality of the inter-nanosheet junctions. Therefore, it is necessary to configure electrical measurement for fundamental characterization. Herein, we produce individual nanosheet field-effect transistors in 5-terminal contact electrodes after a nanosheet transfer onto high-k dielectric substrates from various EE-TMD or LPE-TMD dispersions. A process for the consecutive EBL has been developed. We defined multiple contact electrodes on individual TMD nanosheets on a range of various materials. That way, it was possible to perform 4-point probe measurements allowing precise determination of the conductance of individual nanosheet while removing parasitic components or minimizing their contribution at the contact interfaces. Particularly in the case of EE-PtSe2 nanosheets, this type of measurements has been carried out for the first time. This type of assessment of novel TMD materials will eventually suggest an index indicating the maximum achievable mobility for subsequent printed devices, therefore it will be also compared with and benchmarked against theoretical prediction and THz time domain spectroscopy results. Not only for single nanosheets, but the same measurement scheme will be applied to networks, film, and multicomponent heterostructures.

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Publication Details

Journal
Zenodo (CERN European Organization for Nuclear Research)
Published
2024-10-01
DOI
https://doi.org/10.5281/zenodo.13867091
Primary Topic
Global Healthcare and Medical Tourism
Type
article
Field-Weighted Citation Impact
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article

D5.1. – Electrical characterization of LPE derived novel materials

Zenodo (CERN European Organization for Nuclear Research)
Global Healthcare and Medical Tourism
article

D5.1. – Electrical characterization of LPE derived novel materials

article en

Abstract

Prior to evaluation of excellent electronic properties of macroscale printed devices, individual nanosheets must be assessed first because it tends to be limited by quality of the inter-nanosheet junctions. Therefore, it is necessary to configure electrical measurement for fundamental characterization. Herein, we produce individual nanosheet field-effect transistors in 5-terminal contact electrodes after a nanosheet transfer onto high-k dielectric substrates from various EE-TMD or LPE-TMD dispersions. A process for the consecutive EBL has been developed. We defined multiple contact electrodes on individual TMD nanosheets on a range of various materials. That way, it was possible to perform 4-point probe measurements allowing precise determination of the conductance of individual nanosheet while removing parasitic components or minimizing their contribution at the contact interfaces. Particularly in the case of EE-PtSe2 nanosheets, this type of measurements has been carried out for the first time. This type of assessment of novel TMD materials will eventually suggest an index indicating the maximum achievable mobility for subsequent printed devices, therefore it will be also compared with and benchmarked against theoretical prediction and THz time domain spectroscopy results. Not only for single nanosheets, but the same measurement scheme will be applied to networks, film, and multicomponent heterostructures.

Zenodo (CERN European Organization for Nuclear Research)
Universität der Bundeswehr München (DE)
Openalex Percentile: Top 36%
Global Healthcare and Medical Tourism
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