Standardized Test Routines for the Assessment of Potential Induced Degradation of Perovskite Solar Cells

Potential induced degradation (PID) is a well-studied and understood phenomenon for crystalline silicon solar cells. The most common PID of the shunting type (PID-s) in silicon solar cells is caused by sodium ions' drift and diffusion processes, causing an increased number of local shunts. Based on this knowledge, standard PID tests and equipment have been developed. On the other hand, the physics of perovskite solar cell degradation and the behavior in PSCs under similar stress conditions remains less explored. Therefore, we investigated the applicability of the standard PID tests to three distinct perovskite samples utilizing the commercial PIDcon Bifacial Device. We also checked the effect of the polarity of voltage bias, which helped us to distinguish temperature-induced and voltage-induced effects. The results show that not all PSCs behaved uniformly under PID stress; some displayed improved fill factors, suggesting an enhancement in performance rather than degradation. The varying responses also show the effect of composition on PID resilience. While our findings confirm the promising nature of PSCs' resilience to PID, optical and structural analysis are necessary to pinpoint the exact PID mechanism in PSCs.