Simulation of Topcon/Perc Hybrid Bottom Structure for Perovskite/Silicon Tandem Solar Cells Using Quokka3

This work emphasizes the potential of perovskite/silicon tandem solar cells for increased power conversion efficiencies. By employing crystalline silicon (c-Si) as the bottom cell, particularly with p-type PERC technology, there are cost-effective and advantageous physical properties. However, traditional phosphorus-doped emitters in PERC Si bottom cells are hindered by high surface recombination, which limits their performance. This research introduces a novel hybrid PERC/TOPCon structure that integrates a phosphorus-doped poly-Si (n+ TOPCon) layer as the front emitter to address these challenges. Numerical simulations using Quokka3 confirmed the feasibility of the design, focusing on optimizing the rear side metallization to enhance implied open-circuit voltage (Voc) and fill factor (FF). A two-step process systematically varied local contact openings to examine their impact on performance metrics. Results highlighted optimal rear metallization parameters, achieving optimal metal fractions approximately 2%. This innovative approach demonstrates the effectiveness of combining TOPCon and PERC technologies for bottom cells in tandem structures, providing valuable insights into their development and optimization. The study underscores the potential of the hybrid PERC/TOPCon structure in enhancing the functionality and efficiency of perovskite/silicon tandem solar cells.