Simulation and Design Optimization of Interdigitated Back Contact Silicon Solar Cells with Dopant-Free Asymmetric Hetero-Contacts

In this study, we employ Quokka2 simulations to optimize the design of dopant-free interdigitated back-contact (IBC) solar cells. The investigation focuses on the effects of varying the widths of the hole and electron transport layers (HTL and ETL) and the gap between them on the efficiency of solar cells with N-type and P-type crystalline silicon (c-Si) substrates. The results indicate that optimizing the gap from 150 μm to 5 μm enhances the efficiency of N-type c-Si substrate cells, increasing from 24.6% to 25.1%, assuming the 5 ms midgap SRH bulk lifetime. Similarly, the efficiency of P-type c-Si substrate cells improves from 24.6% to 25.4%. These findings indicate a potential approach for manufacturing high-efficiency dopant-free silicon-based IBC solar cells by optimizing the dimensions of the interlayers.