Electrical Control of Photoluminescence in 2D Semiconductors Coupled to Plasmonic Lattices

Integrating two-dimensional (2D) semiconductors into nanophotonic structures provides a versatile platform for advanced optoelectronic devices. A key challenge in realizing these systems is to achieve control over light emission from these materials. In this work, we demonstrate the modulation of photoluminescence (PL) in transition metal dichalcogenides (TMDs) coupled to surface lattice resonances in metal nanoparticle arrays. We show that both the intensity and the emission angle of light can be tuned by adjusting the lattice parameters. By applying gate electrodes to electrostatically dope the TMDs coupled to plasmonic lattices, we achieve PL intensity switching over 2 orders of magnitude with a low applied voltage. Our results represent an important step toward electrically powered and electrically tunable light sources based on 2D semiconductors.

Publication Details

Journal
Repository for Publications and Research Data (ETH Zurich)
Published
2025-02-04
DOI
https://doi.org/10.3929/ethz-b-000717593
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
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article

Electrical Control of Photoluminescence in 2D Semiconductors Coupled to Plasmonic Lattices

Repository for Publications and Research Data (ETH Zurich)
2D Materials and Applications
article

Electrical Control of Photoluminescence in 2D Semiconductors Coupled to Plasmonic Lattices

article en

Abstract

Integrating two-dimensional (2D) semiconductors into nanophotonic structures provides a versatile platform for advanced optoelectronic devices. A key challenge in realizing these systems is to achieve control over light emission from these materials. In this work, we demonstrate the modulation of photoluminescence (PL) in transition metal dichalcogenides (TMDs) coupled to surface lattice resonances in metal nanoparticle arrays. We show that both the intensity and the emission angle of light can be tuned by adjusting the lattice parameters. By applying gate electrodes to electrostatically dope the TMDs coupled to plasmonic lattices, we achieve PL intensity switching over 2 orders of magnitude with a low applied voltage. Our results represent an important step toward electrically powered and electrically tunable light sources based on 2D semiconductors.

Repository for Publications and Research Data (ETH Zurich)
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2D Materials and Applications
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