Thermal Performance Differences Between Ceramic Packages and Lead Frame Packages for Dr.MOS

This study evaluates the thermal performance of Lead Frame, Al₂O₃ Direct-Plated Copper (DPC) Ceramic, and AlN DPC Ceramic packages in Driver-MOSFET(Dr.MOS) devices. Experimental measurements at 12V and 19V under current loads of 0A–40A, along with ICEPAK simulations, confirm that the AlN DPC Ceramic package achieves the lowest thermal resistance (Rthjc = 1.48 K/W) and temperature rise (120.7°C at 19V, 40A). The Lead Frame package exhibits moderate thermal performance (Rthjc = 2.61 K/W, 144.6°C), while the Al₂O₃ DPC Ceramic package shows the highest thermal resistance (Rthjc = 3.33 K/W) and temperature rise (172.8°C), limiting its suitability for high-power applications. These results emphasize the significant impact of packaging materials on thermal management, identifying AlN as the most efficient solution for high-power Dr.MOS applications.