Characterization of silicon photomultipliers with different structures

Silicon Photomultipliers (SiPMs) are crucial devices in various photon-counting applications. They are mainly produced with two pixel structures, with deeply burned and surface pixel designs offering distinct advantages. This study investigates the impact of these structural differences on key parameters of two representative SiPMs: the MAPD-3NM-II (Zecotek Photonics) with a deeply burned structure and the MPPC S12572-010P (Hamamatsu Photonics) with a surface pixel structure.

Publication Details

Journal
OSF Preprints (OSF Preprints)
Published
2025-01-01
DOI
https://doi.org/10.17605/osf.io/vda5g
Primary Topic
Radiation Detection and Scintillator Technologies
Type
article
Field-Weighted Citation Impact
0.00
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article

Characterization of silicon photomultipliers with different structures

OSF Preprints (OSF Preprints)
Radiation Detection and Scintillator Technologies
article

Characterization of silicon photomultipliers with different structures

article en

Abstract

Silicon Photomultipliers (SiPMs) are crucial devices in various photon-counting applications. They are mainly produced with two pixel structures, with deeply burned and surface pixel designs offering distinct advantages. This study investigates the impact of these structural differences on key parameters of two representative SiPMs: the MAPD-3NM-II (Zecotek Photonics) with a deeply burned structure and the MPPC S12572-010P (Hamamatsu Photonics) with a surface pixel structure.

OSF Preprints (OSF Preprints)
Industry, innovation and infrastructure
Openalex Percentile: Top 40%
Radiation Detection and Scintillator Technologies
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Characterization of silicon photomultipliers with different structures · OSF Preprints (OSF Preprints) (2025) | TGRS Research Map | TGRS