Optical Modificationof TMD Heterostructures

Optical modification is a fast, cost-effective, and scalable approach to tailoring the physical properties of two-dimensional (2D) materials for various applications. However, most previous efforts have focused on modifying individual 2D materials, which fails to utilize the method to its fullest potential. In this paper, heterostructures composed of hBN-capped molybdenum ditelluride (MoTe<sub>2</sub>) and molybdenum disulfide (MoS<sub>2</sub>) are optically modified with a continuous wave laser. The process simultaneously thins MoS<sub>2</sub> and induces clustering of tellurium atoms from the ablated MoTe<sub>2</sub>. These structural changes result in significant enhancements of the physical properties, including a 43-fold increase in MoS<sub>2</sub> photoluminescence and the transformation of the heterojunction into an anti-ambipolar transistor. These findings highlight a previously unutilized pathway to tune the heterostructure properties for applications in novel electronics and optoelectronics.

Publication Details

Journal
Figshare
Published
2025-03-06
DOI
https://doi.org/10.1021/acs.nanolett.4c06512.s001
Primary Topic
Plant pathogens and resistance mechanisms
Type
article
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Optical Modificationof TMD Heterostructures

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Plant pathogens and resistance mechanisms
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Optical Modificationof TMD Heterostructures

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Abstract

Optical modification is a fast, cost-effective, and scalable approach to tailoring the physical properties of two-dimensional (2D) materials for various applications. However, most previous efforts have focused on modifying individual 2D materials, which fails to utilize the method to its fullest potential. In this paper, heterostructures composed of hBN-capped molybdenum ditelluride (MoTe<sub>2</sub>) and molybdenum disulfide (MoS<sub>2</sub>) are optically modified with a continuous wave laser. The process simultaneously thins MoS<sub>2</sub> and induces clustering of tellurium atoms from the ablated MoTe<sub>2</sub>. These structural changes result in significant enhancements of the physical properties, including a 43-fold increase in MoS<sub>2</sub> photoluminescence and the transformation of the heterojunction into an anti-ambipolar transistor. These findings highlight a previously unutilized pathway to tune the heterostructure properties for applications in novel electronics and optoelectronics.

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Openalex Percentile: Top 40%
Plant pathogens and resistance mechanisms
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