High-Throughput Information\nStorage in an Intelligent\nResponse Phosphor

Persistent phosphor has emerged as a promising candidate\nfor information\nstorage due to rapid accessibility and low-energy requirements. However,\nthe low storage capacity has limited its practical application. Herein,\nwe skillfully designed and developed NaGdGeO<sub>4</sub>:Pb<sup>2+</sup>,Tb<sup>3+</sup> stimulated phosphor by trace doped Sm<sup>3+</sup>. As expected, this phosphor demonstrates a larger carrier capacity\nthan traditional commercial SrAl<sub>2</sub>O<sub>4</sub>:Eu<sup>2+</sup>,Dy<sup>3+</sup> phosphors and superstrong thermostimulated luminescence\n(TSL) that is three times greater than its photoluminescence (PL)\nintensity (PL efficiency, 17.3%). A mechanism of the enhanced and\ncontrollable TSL is proposed based on electron–hole defect\npair structure. We further present a high-throughput optical data\nrecording in five dimensions in a single fluorescent film recording\nlayer. The findings described here provide not only a universal approach\nfor constructing TSL materials but also a new paradigm for future\ngeneration optical storage technology.