Exploring the\nConductive Dynamics of Sb<sub>2</sub>(S,Se)<sub>3</sub>‑Based\nMemristors for Non-Volatile Memory\nand Neuromorphic Applications

Advancing\nthe development of novel materials or architectures\nfor\nrandom access memories, coupled with an in-depth understanding of\ntheir intrinsic conduction mechanisms, holds the potential to transcend\nthe conventional von Neumann bottleneck. In this work, a novel memristor\nbased on the Sb<sub>2</sub>(S,Se)<sub>3</sub> material with an alloy\nof S and Se was fabricated. A systematic investigation of the correlation\nbetween the Se/(S + Se) ratio and memristive performance revealed\nthat Ag/Sb<sub>2</sub>(S,Se)<sub>3</sub>/FTO memristive behavior\nis uniquely associated with the formation and disruption of anion\nvacancies and silver filaments. The resultant Ag/Sb<sub>2</sub>(S,Se)<sub>3</sub>/FTO memristor devices demonstrated good resistive switching,\nwith durability surpassing 3 × 10<sup>4</sup> cycles, showcasing\nmultilevel conductivity states. Furthermore, these devices successfully\nemulated the synaptic functionality. This research has established\nthe foundation for the intrinsic conduction mechanisms of antimony\nchalcogenide memristor artificial synapses.