Geometry-Derived\nAsymmetric Schottky Contacts Based\non Chemical Vapor Deposited MoS<sub>2</sub>

The physical and electronic asymmetry of metal–semiconductor–metal\n(MSM) can be regarded as a unique feature, which may be unconsciously\nintroduced when constructing MSM heterostructures and devices. Here,\nwe reveal asymmetrical Schottky contacts derived from the triangular\ngeometry of chemical vapor deposited (CVD) MoS<sub>2</sub> with different\nTi/Au electrode areas. A significant rectification can be induced\nin such an asymmetrical Schottky contact of MSM, with a modulated\nrectification ratio over 10<sup>4</sup> under external gating and\nlaser illumination. The Schottky barrier (SB) height difference caused\nby the triangular MoS<sub>2</sub> geometry-derived asymmetric contact\nwas then verified through constructing a symmetrical contact of MSM\nbased on the triangular CVD MoS<sub>2</sub> with different symmetrical\ncontact areas. The effective SB height difference corresponding to\nasymmetric contacts was also extracted based on the optimized thermal\nexcitation theory. This work not only presents an intriguing case\nfor the preparation of devices based on CVD 2D materials with particular\ngeometries but also provides a facile method for the design of various\ndevice geometries for potential applications in electronics and optoelectronics.