ReconfigurableInverter Based on Ferroelectric-GatingMoS₂ Field-Effect Transistors toward In-Memory Logic Operations

With the advancement of information technology in contemporary society, there is an increasing demand for the rapid processing of large amounts of data. Concurrently, traditional silicon-based integrated circuits have reached their performance limits due to the exacerbation of non-ideal effects. This necessitates further multifunctionalities and miniaturization of modern integrated circuits. In recent years, two-dimensional (2D) materials have demonstrated exceptional physical and electrical properties and have emerged as a promising method for the development of next-generation electronic devices. Ferroelectric materials enable the flexible adjustment of polarization states, thereby simultaneously achieving non-volatile memory and the modulation of carrier transport. Moreover, reconfigurable logic allows for the dynamic adjustment of computational functions when different tasks are executed, significantly enhancing logical operation capabilities. Here, we report a reconfigurable logic inverter based on ferroelectric-gating MoS₂ field-effect transistors. Notably, the ferroelectric transistor achieves a high <i>I</i>_on/<i>I</i>_off ratio of ∼10⁶ and a memory window of ∼20 V. Furthermore, the reconfigurable inverter realized using two as-fabricated ferroelectric field-effect transistors (FeFETs) can produce three distinct output logics (including always “0”, always “1”, and inverter) in different polarization states under the same input. This study provides a strategy for achieving reconfigurable logic in ferroelectric-gating transistors, thereby offering a potential functional block for the development of in-memory computing.