Inorganic Semiconductor-Based\nFlexible UV Photodetector\nArrays Achieved by Specific Flip-Chip Bonding

In recent years, flexible UV photodetectors (PDs) with\ncomplex\nenvironmental adaptability and great wearability have attracted the\nattention of researchers worldwide. Wide bandgap inorganic semiconductor\nmaterials with excellent optoelectronic properties and mechanical\nstability are key functional materials for UV PD devices. However,\nthe high temperature processing and inherent brittleness limit the\nfurther application of high-quality inorganic semiconductors in the\nfield of flexible optoelectronics. In this work, we develop a specific\nflip-chip bonding fabrication technique that utilizes high-temperature\ntreated inorganic semiconductor materials for high-performance flexible\nUV detection devices. Leveraging this technique, a 7 × 7 pixel\nflexible UV photodetector array (UV-FPDA) device based on a vertical\narchitecture Mg-doped ZnO/NiO (Mg:ZnO/NiO) heterojunction transistor\nis built. The UV-FPDAs exhibit a high responsivity of 75.8 A/W and\nan outstanding detectivity of 8.5 × 10<sup>12</sup> Jones. Besides,\nthe UV-FPDAs also demonstrate excellent bending stability. Furthermore,\nthe photoresponse characteristics of each pixel are trained and learned\nby an artificial neural network to achieve clear imaging of UV light\ninformation. Our results provide a new pathway for the application\nof inorganic semiconductors in the field of high-performance flexible\nUV photodetection.