Defect-Induced\nAtomical Zn–O/N–C Bonding\nPromotes Efficient Charge Transfer in S‑Scheme Interface for\nBubble Level Solar Hydrogen Production

Establishing\nefficient and clear atomic-level charge transfer channels\npresents a significant challenge in the design of effective photocatalysts.\nA sound strategy has been developed herein involving the construction\nof defect-induced heterostructures that create chemical bonds serving\nas charge transfer channels at the heterojunction interface. In situ\nXPS, alongside theoretical calculations, demonstrates the successful\nconstruction of Zn–O/N–C as atomic charge transfer channels.\nOur findings reveal that the introduction of zinc vacancies (V<sub>Zn</sub>) reduces the carrier transport activation energy (CTAE)\nfrom 155.2 meV for ZIS/CN to 128.7 meV for V<sub>Zn</sub>-ZIS/CN.\nConsequently, the optimal V<sub>Zn</sub>-ZIS/CN achieves a high hydrogen\nevolution rate of 22.26 mmol g<sup>–1</sup> h<sup>–1</sup> without Pt as a cocatalyst, which is approximately 57 times greater\ncompared to that of ZIS/CN. Notably, hydrogen is generated at bubble\nlevels under natural sunlight. This work provides insights into the\nmechanisms by which defect-induced heterostructure building strategies\ncan introduce chemical bonds at the heterojunction interface.