NanocolumnFloating Gates Induced by the SupramolecularBlending Strategy for Highly Improved Charge Trapping Capacity

Nonvolatile organic field-effect transistor (OFET) memory devices have attracted extensive attention due to their advantages such as lightweightedness and nonvolatile readout. With the increasing demand for storage capacity and efficiency, it is extremely important to design high-capacity and stable OFET memory devices. Here, we propose a universal and convenient supramolecular blended strategy to conveniently prepare in situ the uniform size-tunable nanocolumn (NC) structures and further improve the charge capture ability in organic field-effect transistor (OFET) memory. Interestingly, size-tunable PF-CONH/PMMA nanocolumns (PFPM NCs) can be easily in situ-manufactured via during spin-coating processing from the supramolecular blending system of the conjugated polymer PF-CONH and PMMA. After 10,000 s of retention time, the OFET memory devices based on the PFPM NC array as the charge trapping layer showed a 16.4-fold memory window and a 40-fold ON/OFF ratio compared with the pure PMMA film. In addition, the ON/OFF ratio of the PFPM NC device was 1.6 times that of pure PF-CONH. The supramolecular blending mechanism expands the preparation scheme of nanocolumn memory devices and provides a basis for further improving the device stability and the charge trapping ability of the charge trapping layer.