The Effect of Temperature\non the Carrier Transport\nPerformance of p‑CuO/n-WO<sub>3</sub> Self-Powered Photodetectors

A UV–visible light self-powered photodetector\nbased on p-CuO/n-WO<sub>3</sub> heterojunction structure was prepared\nby hydrothermal and\nspin-coating methods. The photoelectrical properties of the detector\nat room temperature and its electrical properties in the temperature\nrange from room temperature to 200 °C were studied. In particular,\nit shows extremely sensitive response between 400 and 700 nm, with\na sensitivity of 449.5 at room temperature, a rise time of 32.6 ms,\na fall time of 31.8 ms, and a maximum responsivity of 4.589 μA/W.\nTheoretical simulation reveals detailed information about the behavior\nof electrons and holes, emphasizing the distribution of the electric\nfield in the steady state of the device. Theoretical simulations indicate\nthat the WO<sub>3</sub> layer, where the electric field is maximized,\nserves as the pressure-bearing layer, with breakdown primarily occurring\nin this region. These findings provide a straightforward manufacturing\nmethod for self-powered devices.