Efficient intraband radiative recombination in Bi-doped Si nanocrystals

\n\nIt is shown theoretically that sufficiently strong short-range potential of a donor in combination with the effect of quantum confinement is capable of creating great splitting of the energy levels in the conduction band of small Si nanocrystals with a Bi atom. Consequently, radiative transitions between the split levels can generate photons of the near-infrared and, even, visible ranges. Typical rates of these intraband transitions are of the order of 107 s−1, which allows one to hope for high efficiency of possible luminescence in the system.\n

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Publication Details

Journal
Springer Link (Chiba Institute of Technology)
Published
2024-12-11
DOI
https://doi.org/10.1209/0295-5075/ad95b7/pdf
Primary Topic
Silicon Nanostructures and Photoluminescence
Type
article
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article

Efficient intraband radiative recombination in Bi-doped Si nanocrystals

Springer Link (Chiba Institute of Technology)
Silicon Nanostructures and Photoluminescence
article

Efficient intraband radiative recombination in Bi-doped Si nanocrystals

article en

Abstract

\n\nIt is shown theoretically that sufficiently strong short-range potential of a donor in combination with the effect of quantum confinement is capable of creating great splitting of the energy levels in the conduction band of small Si nanocrystals with a Bi atom. Consequently, radiative transitions between the split levels can generate photons of the near-infrared and, even, visible ranges. Typical rates of these intraband transitions are of the order of 107 s−1, which allows one to hope for high efficiency of possible luminescence in the system.\n

Springer Link (Chiba Institute of Technology)
N. I. Lobachevsky State University of Nizhny Novgorod (RU)
Affordable and clean energy
Openalex Percentile: Top 72%
Silicon Nanostructures and Photoluminescence
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Efficient intraband radiative recombination in Bi-doped Si nanocrystals · Springer Link (Chiba Institute of Technology) (2024) | TGRS Research Map | TGRS