High-Throughput\nSpectroscopy of Geometry-Tunable Arrays\nof Axial InGaAs Nanowire Heterostructures with Twin-Induced Carrier\nConfinement

Predicting the optical properties of large-scale ensembles\nof luminescent\nnanowire arrays that host active quantum heterostructures is of paramount\ninterest for on-chip integrated photonic and quantum photonic devices.\nHowever, this has remained challenging due to the vast geometrical\nparameter space and variations at the single object level. Here, we\ndemonstrate high-throughput spectroscopy on 16800 individual InGaAs\nquantum heterostructures grown by site-selective epitaxy on silicon,\nwith varying geometrical parameters to assess uniformity/yield in\nluminescence efficiency, and emission energy trends. The luminescence\nuniformity/yield enhances significantly at prepatterned array mask\nopening diameters (<i>d</i><sub>0</sub>) greater than 50\nnm. Additionally, the emission energy exhibits anomalous behavior\nwith respect to <i>d</i><sub>0</sub>, which is notably attributed\nto rotational twinning within the InGaAs region, inducing significant\nenergy shifts due to quantum confinement effects. These findings provide\nuseful insights for mapping and optimizing the interdependencies between\ngeometrical parameters and electronic/optical properties of widely\ntunable sets of quantum nanowire heterostructures.