Homogeneously Blended Donor and Acceptor AgBiS<sub>2</sub> Nanocrystal Inks Enable High‐Performance Eco‐Friendly Solar Cells with Enhanced Carrier Diffusion Length (Adv. Energy Mater. 12/2025)

Solar Cells Surface trap sites in AgBiS2 nanocrystals cause trap-assisted recombination and short diffusion lengths, decreasing power conversion efficiency (PCE) in photovoltaic applications. In article number 2404552, Oh-Hoon Kwon, Jongmin Choi, and co-workers present a donor–acceptor blended solar cell with tailored surface chemistry, which promotes carrier separation, extends carrier lifetime and diffusion lengths, and improves PCE to 8.26%.

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Publication Details

Journal
Advanced Energy Materials
Published
2025-03-01
DOI
https://doi.org/10.1002/aenm.202570062
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.00
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article

Homogeneously Blended Donor and Acceptor AgBiS2 Nanocrystal Inks Enable High‐Performance Eco‐Friendly Solar Cells with Enhanced Carrier Diffusion Length (Adv. Energy Mater. 12/2025)

Advanced Energy Materials
Chalcogenide Semiconductor Thin Films
article

Homogeneously Blended Donor and Acceptor AgBiS2 Nanocrystal Inks Enable High‐Performance Eco‐Friendly Solar Cells with Enhanced Carrier Diffusion Length (Adv. Energy Mater. 12/2025)

article en

Abstract

Solar Cells Surface trap sites in AgBiS2 nanocrystals cause trap-assisted recombination and short diffusion lengths, decreasing power conversion efficiency (PCE) in photovoltaic applications. In article number 2404552, Oh-Hoon Kwon, Jongmin Choi, and co-workers present a donor–acceptor blended solar cell with tailored surface chemistry, which promotes carrier separation, extends carrier lifetime and diffusion lengths, and improves PCE to 8.26%.

Advanced Energy MaterialsVol. 15(12)
Kookmin University (KR), Daegu Gyeongbuk Institute of Science and Technology (KR), Chungnam National University (KR), Ulsan National Institute of Science and Technology (KR)
Affordable and clean energy
Openalex Percentile: Top 54%
Chalcogenide Semiconductor Thin Films
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