Advancing High-Performance\nMemristors Enabled by Position-Controlled\nGrain Boundaries in Controllably Grown Star-Shaped MoS<sub>2</sub>

Two-dimensional transition metal dichalcogenides are\nhighly promising\nplatforms for memristive switching devices that seamlessly integrate\ncomputation and memory. Grain boundaries (GBs), an important micro–nanoscale\nstructure, hold tremendous potential in memristors, but their role\nremains unclear due to their random distribution, which hinders fabrication.\nHerein, we present a novel chemical vapor deposition approach to synthesize\nstar-shaped MoS<sub>2</sub> nanoflakes with precisely positioned GBs.\nThis approach enables memristor fabrication at specific locations\nand notably reduces the average set voltage (16-fold reduction) compared\nto single-crystalline MoS<sub>2</sub>, due to reduced diffusion barriers\nfor metallic ions through GBs, as further validated by theoretical\ncalculations. These findings offer a new method for synthesizing TMDs\nwith controlled GBs for memristor fabrication, highlighting the crucial\nrole of GBs in reducing set voltage and power consumption, advancing\nmemristive switching devices toward applications in integrated computation\nand memory systems.