Interfacial\nMolecular Engineering for Efficient Sn\nPerovskite Light-Emitting Diodes

In recent years, perovskite light-emitting diodes (PeLEDs)\nhave\ndemonstrated exceptional potential, achieving high external quantum\nefficiencies (EQEs) exceeding 20%. However, these advancements have\nprimarily focused on visible colors, and toxic elements such as Pb\nare used in these devices. Tin (Sn) perovskites with a narrow band\ngap of nearly 1.3 eV present a promising candidate for lead-free near-infrared\nPeLEDs. Nonetheless, Sn oxidation and high defect density from fast\ncrystallization are still hurdles to overcome. This study investigates\nthe impact of a newly synthesized ethylenedioxythiophene (EDOT)-based\nconjugated organic ligand on Sn-based PeLEDs, aiming to enhance device\nperformance by reducing the defect density and Sn oxidation. The EDOT-treated\nPeLED device achieves a high EQE of 6.4% and exhibits stable electroluminescence\nspectra, demonstrating the potential of ligand treatments in optimizing\nSn-based PeLEDs.