Supplementary document for Transport dynamics of photo-induced carriers in GaN quantum well infrared photodetectors influenced by triangular potentials - 7321092.pdf

Publication Details

Journal
OPAL (Open@LaTrobe) (La Trobe University)
Published
2025-01-01
DOI
https://doi.org/10.6084/m9.figshare.28129526.v2
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
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Supplementary document for Transport dynamics of photo-induced carriers in GaN quantum well infrared photodetectors influenced by triangular potentials - 7321092.pdf

OPAL (Open@LaTrobe) (La Trobe University)
GaN-based semiconductor devices and materials
article

Supplementary document for Transport dynamics of photo-induced carriers in GaN quantum well infrared photodetectors influenced by triangular potentials - 7321092.pdf

article en

Abstract

No abstract available for this paper.
OPAL (Open@LaTrobe) (La Trobe University)
Openalex Percentile: Top 69%
GaN-based semiconductor devices and materials
DOISourceOpenAlex
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Supplementary document for Transport dynamics of photo-induced carriers in GaN quantum well infrared photodetectors influenced by triangular potentials - 7321092.pdf · OPAL (Open@LaTrobe) (La Trobe University) (2025) | TGRS Research Map | TGRS