Bandgap Engineering\nof 2D Materials toward High-Performing\nStraintronics

Straintronics leverages mechanical strain to alter the\nelectronic\nproperties of materials, providing an energy-efficient alternative\nto traditional electronic controls while enhancing device performance.\nKey to the application of straintronics is bandgap engineering, which\nenables tuning of the energy difference between the valence and conduction\nbands of a material to optimize its optoelectronic properties. This\nmini-review highlights the fundamental principles of straintronics\nand the critical role of bandgap engineering within this context.\nIt discusses the unique characteristics of various two-dimensional\n(2D) materials, such as graphene, transition metal dichalcogenides\n(TMDs), hexagonal boron nitride (h-BN), and black phosphorus, which\nmake them suitable for strain-engineered applications. Detailed examples\nof how mechanical deformation can modulate the bandgap to achieve\ndesired electronic properties are provided, while recent experimental\nand theoretical studies demonstrating the mechanisms by which strain\ninfluences the bandgap in these materials are reviewed, emphasizing\ntheir implications for device fabrication. The review concludes with\nan assessment of the challenges and future directions in the development\nof high-performing straintronic devices, highlighting their potential\napplications in flexible electronics, sensors, and optoelectronics.