Supplementary document for Characterization of internal quantum efficiency of InGaN-based green LEDs grown on Si with various buffer strain - 7344264.pdf

The temperature-dependent non-radiative lifetimes (tnr) and the IQE (?r), the light output power and EQE as a function of current density for samples A and B

Publication Details

Journal
Figshare
Published
2025-01-01
DOI
https://doi.org/10.6084/m9.figshare.28172117.v2
Primary Topic
GaN-based semiconductor devices and materials
Type
article
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Supplementary document for Characterization of internal quantum efficiency of InGaN-based green LEDs grown on Si with various buffer strain - 7344264.pdf

Figshare
GaN-based semiconductor devices and materials
article

Supplementary document for Characterization of internal quantum efficiency of InGaN-based green LEDs grown on Si with various buffer strain - 7344264.pdf

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Abstract

The temperature-dependent non-radiative lifetimes (tnr) and the IQE (?r), the light output power and EQE as a function of current density for samples A and B

Figshare
Affordable and clean energy
Openalex Percentile: Top 69%
GaN-based semiconductor devices and materials
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Supplementary document for Characterization of internal quantum efficiency of InGaN-based green LEDs grown on Si with various buffer strain - 7344264.pdf · Figshare (2025) | TGRS Research Map | TGRS