The Experimental Study on the Thermoelectric Properties of Sputtered Amorphous Molybdenum Disulfide Films

Molybdenum disulfide (MoS₂), a promising two-dimensional material, has attracted significant attention due to its unique electronic and thermal properties, making it a potential thermoelectric material Extensive research is underway to improve the thermoelectric properties of MoS₂ by enhancing the figure of merit (ZT). However, there is currently limited research on the effects of thickness and temperature on the thermoelectric properties of MoS₂ films prepared by magnetron sputtering. In this paper, amorphous MoS₂ films with different thicknesses were first deposited using magnetron sputtering, ranging from 43nm to 231nm. The Frequency Domain Thermoreflectance (FDTR) system was established to measure the thermal conductivity of MoS₂ film. The experimental results indicate a thermal conductivity range of 0.49 to 0.53W/m·K, with thickness showing minimal impact. The thermal boundary conductance between the sputter-deposited MoS₂ film and the SiO₂ substrate is measured at 12±5MW/m² ·K. The electrical conductivity and Seebeck coefficient were measured in the temperature range of 300 K to 450 K using LSR-3 equipment. The results indicate that the MoS₂ films prepared in this study were all p-type semiconductors, with electrical properties increasing with temperature. Within the temperature range of 300–430 K, the power factor of all films increases with the rise in temperature, reaching a maximum value of 0.36 µW/cm·K²