Supplementary document for Enhancement of silicon vacancy fluorescence intensity in SiC using dielectric cavity - 6969629.pdf

Publication Details

Journal
Figshare
Published
2025-01-01
DOI
https://doi.org/10.6084/m9.figshare.25713732
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
0.00
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Supplementary document for Enhancement of silicon vacancy fluorescence intensity in SiC using dielectric cavity - 6969629.pdf

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Silicon Carbide Semiconductor Technologies
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Supplementary document for Enhancement of silicon vacancy fluorescence intensity in SiC using dielectric cavity - 6969629.pdf

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Abstract

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Supplementary document for Enhancement of silicon vacancy fluorescence intensity in SiC using dielectric cavity - 6969629.pdf · Figshare (2025) | TGRS Research Map | TGRS