Supplementary document for Enhanced Near-Infrared Absorption in Lattice-Matched Sc0.14Al0.86N/GaN Multi-Quantum Wells: Growth Optimization and Insights into Polarization Parameters - 7291870.pdf

Publication Details

Journal
Figshare
Published
2025-01-01
DOI
https://doi.org/10.6084/m9.figshare.27880314
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
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article

Supplementary document for Enhanced Near-Infrared Absorption in Lattice-Matched Sc0.14Al0.86N/GaN Multi-Quantum Wells: Growth Optimization and Insights into Polarization Parameters - 7291870.pdf

Figshare
GaN-based semiconductor devices and materials
article

Supplementary document for Enhanced Near-Infrared Absorption in Lattice-Matched Sc0.14Al0.86N/GaN Multi-Quantum Wells: Growth Optimization and Insights into Polarization Parameters - 7291870.pdf

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Abstract

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GaN-based semiconductor devices and materials
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Supplementary document for Enhanced Near-Infrared Absorption in Lattice-Matched Sc0.14Al0.86N/GaN Multi-Quantum Wells: Growth Optimization and Insights into Polarization Parameters - 7291870.pdf · Figshare (2025) | TGRS Research Map | TGRS