Supplementary document for Atomic and close-to-atomic scale structure of 4H-SiC induced by extreme ultraviolet laser irradiation - 6366734.pdf

Supplement 1 shows the Raman spectroscopy and EDS spectroscopy of the initial and irradiated surfaces under 25 shots laser irradiation.

Publication Details

Journal
Figshare
Published
2025-01-01
DOI
https://doi.org/10.6084/m9.figshare.22513540.v3
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
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Supplementary document for Atomic and close-to-atomic scale structure of 4H-SiC induced by extreme ultraviolet laser irradiation - 6366734.pdf

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Silicon Carbide Semiconductor Technologies
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Supplementary document for Atomic and close-to-atomic scale structure of 4H-SiC induced by extreme ultraviolet laser irradiation - 6366734.pdf

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Abstract

Supplement 1 shows the Raman spectroscopy and EDS spectroscopy of the initial and irradiated surfaces under 25 shots laser irradiation.

Figshare
Openalex Percentile: Top 54%
Silicon Carbide Semiconductor Technologies
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Supplementary document for Atomic and close-to-atomic scale structure of 4H-SiC induced by extreme ultraviolet laser irradiation - 6366734.pdf · Figshare (2025) | TGRS Research Map | TGRS