Supplementary document for 480 nm InGaN-based cyan laser diode grown on Si by interface engineering of active region - 6976739.pdf

Publication Details

Journal
Figshare
Published
2025-01-01
DOI
https://doi.org/10.6084/m9.figshare.25678788
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00
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Supplementary document for 480 nm InGaN-based cyan laser diode grown on Si by interface engineering of active region - 6976739.pdf

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GaN-based semiconductor devices and materials
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Supplementary document for 480 nm InGaN-based cyan laser diode grown on Si by interface engineering of active region - 6976739.pdf

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Abstract

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GaN-based semiconductor devices and materials
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Supplementary document for 480 nm InGaN-based cyan laser diode grown on Si by interface engineering of active region - 6976739.pdf · Figshare (2025) | TGRS Research Map | TGRS