LOW-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF METAL-DIELECTRIC-SEMICONDUCTOR STRUCTURES

Interest in studying physical processes occurring on the surfaces of solids has emerged due to the significant influence of surface phenomena on bulk physical processes and the performance of most solid-state devices.

Publication Details

Journal
Zenodo (CERN European Organization for Nuclear Research)
Published
2024-12-27
DOI
https://doi.org/10.5281/zenodo.14563407
Primary Topic
High voltage insulation and dielectric phenomena
Type
article
Field-Weighted Citation Impact
0.00
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article

LOW-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF METAL-DIELECTRIC-SEMICONDUCTOR STRUCTURES

Zenodo (CERN European Organization for Nuclear Research)
High voltage insulation and dielectric phenomena
article

LOW-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF METAL-DIELECTRIC-SEMICONDUCTOR STRUCTURES

article en

Abstract

Interest in studying physical processes occurring on the surfaces of solids has emerged due to the significant influence of surface phenomena on bulk physical processes and the performance of most solid-state devices.

Zenodo (CERN European Organization for Nuclear Research)
Openalex Percentile: Top 73%
High voltage insulation and dielectric phenomena
DOIOpen Access PDFOpenAlex
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LOW-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF METAL-DIELECTRIC-SEMICONDUCTOR STRUCTURES · Zenodo (CERN European Organization for Nuclear Research) (2024) | TGRS Research Map | TGRS