ADVANCED WIDE-BANDGAP SEMICONDUCTOR DEVICES FOR HIGH-POWER APPLICATIONS: GAN, SIC, AND DIAMOND-BASED ELECTRONICS FOR EXTREME ENVIRONMENTS

Wide-bandgap (WBG) semiconductor devices have revolutionized the field of high-power electronics by offeringsuperior efficiency, thermal stability, and operational reliability in extreme environments. As traditional siliconbased devices struggle with limitations in power density, switching speed, and thermal management, advancedWBG materials such as gallium nitride (GaN), silicon carbide (SiC), and diamond have emerged as leadingalternatives for next-generation power electronics. These materials exhibit higher breakdown voltages, widerbandgaps, and enhanced thermal conductivity, making them ideal for applications in aerospace, electric vehicles,renewable energy systems, and high-frequency communications. Among these materials, SiC-based devices havegained significant commercial traction due to their high efficiency and robustness in medium- to high-powerapplications, particularly in power inverters and high-voltage DC transmission. Meanwhile, GaN-based devicesdominate high-frequency and RF applications, offering excellent switching characteristics and reduced powerlosses. Diamond-based semiconductors, though still in the early stages of commercialization, present unparalleledthermal conductivity and ultra-high breakdown fields, making them a promising choice for extreme environmentssuch as space exploration and nuclear power systems. This review explores the fundamental properties, fabricationtechniques, and emerging applications of GaN, SiC, and diamond-based semiconductor devices, highlightingrecent advancements in material engineering and device design. Furthermore, it discusses the key challenges,including manufacturing costs, material defects, and scalability issues, that must be addressed to fully unlock thepotential of these WBG semiconductors in high-power applications. Future directions in material integration,hybrid device architectures, and novel thermal management solutions are also outlined, providing acomprehensive roadmap for the continued evolution of WBG semiconductor technologies