ON PROGNOSIS OF MANUFACTURING OF P-NHETEROJUNCTIONS IN THE FRAMEWORK OF A MULTILEVEL INVERTER WITH REDUCED NUMBER OF SWITCHES TO INCREASE THEIR INTEGRATION RATE. ON INFLUENCE MISMATCH-INDUCED STRESS

In this paper we introduce an approach to increase density of p-n-heterojunctions in the framework of amultilevel inverter with reduced number of switches. Framework the approach we consider manufacturingthe inverter in heterostructure with specific configuration. Several required areas of the heterostructureshould be doped by diffusion or ion implantation. After that dopant and radiation defects should byannealed in the framework od an optimized scheme. We also consider an approach to decrease value ofmismatch-induced stress in the considered heterostructure. We introduce an analytical approach toanalyze mass and heat transport in heterostructures during manufacturing of integrated circuits withaccount mismatch-induced stress.