Preparation of CuAlTe2 Thin Films by Auto-Combustion

Abstract CuAlTe2 films have been fabricated using a novel technique called auto combustion or self-propagating high-temperature synthesis (SHS) through thermal evaporation. This process involved depositing the films onto a mixture of Cu, Al, and Te powder that was cold-pressed. The as-grown films exhibited a chalcopyrite structure with a preferred orientation along the (112) direction, and their lattice constants were determined to be: a=6.058 Å and c=11.98 Å. SEM analysis revealed that the resulting thin films had a nano-structured morphology. Additionally, a direct band-gap value of 2.08 eV was observed.

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Publication Details

Journal
Zenodo (CERN European Organization for Nuclear Research)
Published
2024-09-27
DOI
https://doi.org/10.5281/zenodo.13846187
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

Preparation of CuAlTe2 Thin Films by Auto-Combustion

Zenodo (CERN European Organization for Nuclear Research)
Chalcogenide Semiconductor Thin Films
article

Preparation of CuAlTe2 Thin Films by Auto-Combustion

article en

Abstract

Abstract CuAlTe2 films have been fabricated using a novel technique called auto combustion or self-propagating high-temperature synthesis (SHS) through thermal evaporation. This process involved depositing the films onto a mixture of Cu, Al, and Te powder that was cold-pressed. The as-grown films exhibited a chalcopyrite structure with a preferred orientation along the (112) direction, and their lattice constants were determined to be: a=6.058 Å and c=11.98 Å. SEM analysis revealed that the resulting thin films had a nano-structured morphology. Additionally, a direct band-gap value of 2.08 eV was observed.

Zenodo (CERN European Organization for Nuclear Research)
University Frères Mentouri Constantine 1 (DZ), University of Batna 1 (DZ), University of Skikda (DZ)
Openalex Percentile: Top 66%
Chalcogenide Semiconductor Thin Films
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