X-RAY DIFFRACTION STUDY OF THE PRODUCT OF HIGH-TEMPERATURE DIFFUSION OF MANGANESE IN CRYSTALLINE SILICON OF SAMPLE KDB-3
The object of study was the KDB-3 sample – crystalline silicon (Si) doped with boron (B) and containing oxygen (O). During the experiments, high-temperature diffusion of manganese (Mn) into the crystalline Si structure was carried out at temperatures of 1125–1200°C.
Publication Details
- Journal
- Zenodo (CERN European Organization for Nuclear Research)
- Published
- 2025-05-16
- DOI
- https://doi.org/10.5281/zenodo.15430240
- Primary Topic
- Irrigation Practices and Water Management
- Type
- article
- Field-Weighted Citation Impact
- 0.00