Characterization and modelling of low-frequency noise in polysilicon thin-film source-gated transistors from subthreshold to saturation

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Publication Details

Journal
Zenodo (CERN European Organization for Nuclear Research)
Published
2024-12-11
DOI
https://doi.org/10.5281/zenodo.14624309
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
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article

Characterization and modelling of low-frequency noise in polysilicon thin-film source-gated transistors from subthreshold to saturation

Zenodo (CERN European Organization for Nuclear Research)
Advancements in Semiconductor Devices and Circuit Design
article

Characterization and modelling of low-frequency noise in polysilicon thin-film source-gated transistors from subthreshold to saturation

article en

Abstract

No abstract available for this paper.
Zenodo (CERN European Organization for Nuclear Research)
University of Surrey (GB), UCLouvain (BE)
Openalex Percentile: Top 66%
Advancements in Semiconductor Devices and Circuit Design
DOIOpen Access PDFOpenAlex
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Characterization and modelling of low-frequency noise in polysilicon thin-film source-gated transistors from subthreshold to saturation · Zenodo (CERN European Organization for Nuclear Research) (2024) | TGRS Research Map | TGRS