Development of an Interdigitated Back-Contacted Solar Cell Architecture as a Platform to Assess Emerging Absorbers and New Selective Contacts

This work shows the development of an interdigitated back-contacted (IBC) platform which could be used to develop both novel-materials as selective contacts and emerging absorbers. The first approach was based on amorphous silicon layer as absorber in combination with vanadium oxide (V2Ox) and zinc oxide (ZnO) as hole- and electron-selective contacts, respectively. Short circuit current density (Jsc) and open circuit voltage (Voc) values of 0.6 mA/cm2 and 562 mV, respectively, prove the viability of the proof-of-concept platform to manufacture IBC solar cells. New absorbers will be analyzed in the future using this concept to demonstrate its practicability to study and develop solar cells based on an IBC scheme.