Characterization of an Integrated GaN Driver for Power Switching Applications

Modern GaN-HEMTs require appropriate driving circuits to enable fast switching. Thus, monolithic integration of power switches and gate drivers is necessary. Therefore, this paper demonstrates a GaN driver to control a GaN power switch. Besides static and pulsed characterization, the driver’s performance is validated through continuous switching tests, demonstrating effective operation with turn-on and turn-off times of an emulated load of 1.68 ns and 1.84 ns, respectively.