Static vs. Dynamic Characterization of p-GaN HEMTs: Discrepancies in Electrical Characteristics and their Dependence on Bias History
Quasi-static electrical characteristics of p-GaN HEMTs fluctuate with bias history. This study evidences that dynamic operation is fortunately highly reproducible without pre-conditioning. The original experimental setup highlights that quasi-static data alone is insufficient for modeling dynamic behavior, while allowing precise detection of discrepancies, enabling improved transient modeling.
Institutions
- Laboratoire d'Analyse et d'Architecture des Systèmes (FR)
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
Publication Details
- Journal
- SPIRE - Sciences Po Institutional REpository
- Published
- 2025-05-23
- DOI
- https://doi.org/10.34746/epe2025-0309
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00