Silicon IGBT modules with voltage slopes higher than SiC modules

This paper presents the issue of generating excessive dV/dt in standard medium voltage IGBT modules with PiN freewheel diodes. Two different application scenarios are discussed where the issue arises. A proposed modified double pulse test allows to investigate the phenomenon under controlled laboratory conditions. Power modules from two different manufacturers were characterized and the test results are presented. Finally, a comparison with an intermediate voltage SiC module is shown and relevant EMI considerations conclude the paper.