Sub-Boltzmann Switching,\nHysteresis-Free Charge Modulated\nNegative Differential Resistance FinFET

The ever-increasing power consumption in integrated circuits\nhas\nraised concerns about the relentless doubling of transistor density\nin chips and cost drop per combinational/sequential circuits. To address\nthe physical limit of thermionic emission carrier transport (i.e.,\nsubthreshold swing >60 mV/decade at 300 K), alternative charge-transport\nmechanisms or the implementation of functional substances have been\nattempted but without appreciable success. One such choice is to take\nadvantage of negative differential resistance with the activation\nof localized electrons or migration of atom and oxygen vacancies to\nextend the capabilities of Si-transistors. However, inconsistency\nin current during forward/reverse bias sweep is confronted as a notable\nweak point. This work proposes an eye-catching solution to modulating\npotential distribution between a resistance switching layer and a\ntransistor by employing charge trapping within a hafnium zirconium\noxide layer. This approach introduces features advancing the potential\nof “More Moore” technologies.