Finite element and circuit modeling of SiC MEMS multi-turn piezoresistive sensor device for reliable high-pressure sensing in hostile environments

Purpose This study aims to develop and assess a multi-turn silicon carbide (SiC) micro-electro-mechanical system (MEMS) piezoresistive pressure sensor designed to measure high pressures from 0 to 40 MPa in extreme environments. Silicon-based sensors face accuracy issues at temperatures above 150°C due to leakage currents, but SiC’s superior thermal stability and low-temperature coefficient make it ideal for high-temperature applications exceeding 600°C. The study establishes an analytical framework using small deflection and thin plate theories to evaluate the sensor’s performance, including deflection and sensitivity. Validation through finite element analysis (FEA) shows the sensor’s high sensitivity and improved performance over existing technologies. Design/methodology/approach The design methodology for the proposed SiC MEMS piezoresistive pressure sensor involves several key steps. Initially, an analytical framework was developed using small deflection and thin plate theories to assess the sensor’s deflection, stress distribution and sensitivity. This theoretical model serves as the foundation for evaluating the sensor’s performance in high-pressure environments. To ensure accuracy, the analytical results were validated through FEA conducted with COMSOL Multiphysics software. This comprehensive approach integrates both theoretical and computational analyses to verify the sensor’s performance and enhance its reliability in harsh conditions. Findings The findings of the research indicate that the multi-turn SiC MEMS piezoresistive pressure sensor achieves a high sensitivity of 7.371 mV/V/MPa within a pressure range of 0–40 MPa. This performance is notably superior to existing sensors in the literature. The use of SiC material addresses the accuracy issues associated with silicon-based sensors, particularly in high-pressure and high-temperature environments. The analytical framework, validated by FEA using COMSOL Multiphysics software, confirms that the sensor performs reliably in harsh conditions exceeding 600°C, highlighting its enhanced thermal stability and resistance compared to conventional alternatives. Originality/value The originality of this work lies in the development of a multi-turn SiC MEMS piezoresistive pressure sensor specifically designed for high-pressure measurements in extreme environments. Unlike traditional silicon-based sensors, which struggle with accuracy at temperatures above 150°C due to leakage currents, this research uses SiC’s superior thermal stability, low-temperature coefficient and radiation resistance. The use of a circular diaphragm with a clamped edge condition, combined with an analytical framework based on small deflection and thin plate theories, offers a novel approach for assessing sensor performance. The validation of this approach through FEA further underscores its innovative contribution to sensor technology.