Full\nColor Al-Doped\nInP Quantum Dots with High Brightness\nvia Gram-Scale One-Pot Synthesis for White Light-Emitting Diodes

High-performance, environmentally\nfriendly indium phosphide\n(InP)-based\nquantum dots (QDs) are urgently needed to meet the demands of rapidly\nevolving display and lighting technologies. By adopting the highly\nefficient and cost-effective one-pot method and utilizing aluminum\nisopropoxide (AIP) as the Al source, a series of Al-doped InP/(Al)ZnS\nQDs with emission maxima ranging from 480 to 627 nm were synthesized.\nThe photoluminescence quantum yield (PLQY) of the blue, green, yellow,\norange, and red QDs, with emission peaks at 480, 509, 560, 600, and\n627 nm, reached 34%, 62%, 86%, 96%, and 85%, respectively. Remarkably,\nthe required reaction times for synthesizing the above QDs were all\nwithin 4 h, showcasing the high efficiency of this one-pot method.\nMoreover, the influence of Al-doping on red InP/ZnS QDs was thoroughly\nexplored. Compared with undoped QDs, the increased PLQY, narrowed\nfull-width at half-maximum (fwhm), and enhanced photostability were\nobserved in Al-doped QDs. Characterization results revealed the relatively\nthicker shell in Al-doped QDs and demonstrated the presence of Al\nin the shell in the form of AlPO<sub><i>x</i></sub>. The\nincreased shell thickness and narrowed fwhm indicated a reduced lattice\nstrain at the core–shell interface in Al-doped QDs, which might\nresult from the introduced trivalent Al<sup>3+</sup>, as it alleviated\nthe charge mismatch at the core/shell interface. Approximately 3 g\nof QDs powders can be obtained through a single gram-scale one-pot\npreparation. The on-chip white light-emitting diode (LED), using the\nred and green Al-doped QDs as phosphors, exhibited a maximum power\nefficiency of 17.8 lm W<sup>–1</sup> and stable CIE coordinates\naround (0.32, 0.35), and achieved a wide color gamut (97.4% of the\nNTSC color space), demonstrating the promising potential in lighting\ntechnologies.