Memcapacitors and\nMemristor Characteristics of ISGE-SOT\nand SHE-SOT Gain-Driven MoS<sub>2</sub>:Er Ferromagnets

The enhancement of the spin–orbit torque (SOT)\neffect through\nthe integration of intrinsic inverse spin galvanic effect spin–orbit\ntorque and spin Hall effect spin–orbit torque is fundamentally\ndependent on the structural and material properties of the ferromagnets.\nConsequently, the synthesis of ferromagnets with superior structural\nintegrity and material characteristics is of paramount importance.\nIn this study, a gas–liquid chemical reaction, in conjunction\nwith ultrasonic crushing, was employed to synthesize few-layer MoS<sub>2</sub>:Er nanosheets. X-ray diffraction, X-ray photoelectron spectroscopy,\nand energy-dispersive spectroscopy analyses confirm the successful\nsubstitution of Mo<sup>4+</sup> by Er<sup>3+</sup> through doping\nwithin the MoS<sub>2</sub> lattice. Vibrating sample magnetometry\nand MT measurements indicate that MoS<sub>2</sub>:Er exhibits room-temperature\nferromagnetism (RTFM), with the underlying mechanism elucidated through\nfirst-principles calculations. Furthermore, the unique electron density\nof states at the Fermi level suggests the presence of ferromagnetism\nin MoS<sub>2</sub>:Er. A wedge-shaped Pt/MoS<sub>2</sub>:Er/Au structure\nwas fabricated and subsequently evaluated for current-induced SOT\nswitching, as well as for its memcapacitor and memristor characteristics.\nThe precession of a magnetic moment in three-dimensional space was\nsuccessfully simulated by solving the Landau–Lifshitz–Gilbert–Slonczewski\nequation using the Mumax.