Interfacial\nMechanoelectrochemical Activity of Liquid\nMetals Induced GaN Growth via N<sub>2</sub> Molecular Clipping at\nRoom Temperature

Atomic-level modification of molecules represents a crucial\npathway\nfor developing advanced functional materials and serves as a cornerstone\nof advanced chemical synthesis. Molecular clipping offers a facile,\nlow-energy approach for regulating the composition and structure of\nmaterials, with broad implications for diverse fields. However, existing\nmolecular clipping techniques, including covalent bond breaking and\nreleasing of intermediates, remain synthetically demanding, hindering\ntheir wider adoption. The electron-rich surface of liquid metals confers\na lower reaction potential, suggesting considerable significant potential\nfor catalysis and enabling traditionally demanding reactions to proceed\nefficiently in a simple, low-energy manner. Herein, the unique surface\nproperties of liquid metals were utilized for nitrogen (N<sub>2</sub>) clipping and achieving facile synthesis of gallium nitride (GaN)\nat room temperature, which was previously generally considered unattainable.\nIn a N<sub>2</sub> atmosphere, the liquid metals were stimulated and\nstirred through polytetrafluoroethylene (PTFE), resulting in the generation,\naccumulation, and transport of electric charges on the surface of\nliquid metals and leading to the formation of microcurrents. This\nprocess facilitated the clipping of the exceptionally strong NN\nbond, generating reactive nitrogen species that subsequently reacted\nwith gallium (Ga) to form GaN. This work offers a facile and potentially\ngeneralizable strategy for complex molecular editing, advancing the\ndevelopment of atomically precise functional materials.