Enhanced Intrinsic\nElectrical Properties in Twisted\nTellurium Nanowires

The discovery of magic-angle graphene has brought the\nstudy of\ntwistronics to the forefront. Currently, twistronics generally study\nstrongly correlated states in condensed matter physics such as superconductivity,\nMott insulator, Chen insulator, nematic order, etc., and fewer electrical\nconductivity investigations have been conducted in the direction perpendicular\nto the twist angle. This paper examines the conductivity properties\nof tellurium (Te) twisted nanowires that were manufactured under highly\nalkaline circumstances. The twisted nanowires exhibit a resistance\napproximately one-third that of the untwisted nanowires. The conductivity\nparameters were evaluated after eliminating the twist angle by a semiconductor\nannealing technique. These concepts clearly demonstrate how the twist\nangle and annealing factor impact the conductivity of semiconductor\nnanowires. Our result offers useful information for future investigations\nin the field of twistronics and presents possible opportunities for\nexamining the electrical characteristics in the vertical orientation\nof the twist angle.