Paving\nthe Way for Pass Disturb-Free Vertical NAND\nStorage via a Dedicated and String-Compatible Pass Gate

In\nthis work, we propose a dual-port cell design to address the\npass disturbance in vertical NAND storage, which can pass signals\nthrough a dedicated and string-compatible pass gate. We demonstrate\nthat (i) the pass disturb-free feature originates from weakening of\nthe depolarization field by the pass bias at the high-<i>V</i><sub>TH</sub> (HVT) state and the screening of the applied field\nby the channel at the low-<i>V</i><sub>TH</sub> (LVT) state;\n(ii) combined simulations and experimental demonstrations of dual-port\ndesign verify the disturb-free operation in a NAND string, overcoming\na key challenge in single-port designs; (iii) the proposed design\ncan be incorporated into a highly scaled vertical NAND FeFET string,\nand the pass gate can be incorporated into the existing three-dimensional\n(3D) NAND with the negligible overhead of the pass gate interconnection\nthrough a global bottom pass gate contact in the substrate.