Atomic-Scale\nDynamic Mechanisms of Embedded MoS<sub>2</sub> Wires

Nanowires\ncomposed of a 1:1 stoichiometry of transition metals\nand chalcogen ions can be fabricated from two-dimensional transition\nmetal dichalcogenides (TMDs) by using electron beam irradiation. Wires\nfabricated through in situ experiments can be geometrically connected\nto TMD sheets in various ways, and their physical properties can vary\naccordingly. Understanding the structural transformation caused by\nelectron beams is critical for designing wire-sheet structures for\nnanoelectronics. In this study, we report the behavior of nanowires\nformed inside a monolayer MoS<sub>2</sub> sheet by combining phase-contrast\nimages and large-scale atomistic modeling. We investigate the effect\nof vacancies on the dynamic evolution of wires, such as rotations\nwith different edge structures and breaking, by considering the interactions\nbetween MoS wires and MoS<sub>2</sub> nanosheets. The obtained insights\ncan be applied to other monolayer TMDs to guide the behavior of TMD\nwires and fabricate favorable geometries for various applications.