Programmable2H-MoTe₂ FGFET-Based CMOSArray

A programmable 2H-MoTe₂ floating-gate field-effect transistor (FGFET)-based complementary metal oxide semiconductor (CMOS) array has been fabricated on the grown substrate. Coplanar grown metallic 1T′-MoTe₂ serves as the source and drain electrodes. The conductive type of the 2H-MoTe₂ channel is manipulated by a top-gate engineering method. A typical FGFET-based CMOS device has a memory window as large as ∼10.6 V and power consumption as low as 0.39 nW. The threshold voltage and output voltage of the device can be modulated by programming voltage pulses. Various stable and reproducible logic functions are implemented. The CMOS array has a high device yield of 90%. We attribute our achievement to the high-quality CVD-grown large-scale 2H/1T′-MoTe₂ coplanar heterostructure, the novel method for p/n-type conversion of 2H-MoTe₂, and the reliable device process that is compatible with the silicon-based process. This innovative integration of memory and CMOS opens a way to realizing energy-efficient logic-in-memory circuits based on two-dimensional transition metal dichalcogenides.