Antiferroelectric\nHeterostructures Memristors with\nUnique Resistive Switching Mechanisms and Properties

A novel antiferroelectric material, PbSnO<sub>3</sub> (PSO), was\nintroduced into a resistive random access memory (RRAM) to reveal\nits resistive switching (RS) properties. It exhibits outstanding electrical\nperformance with a large memory window (>10<sup>4</sup>), narrow\nswitching\nvoltage distribution (±2 V), and low power consumption. Using\nhigh-resolution transmission electron microscopy, we observed the\nantiferroelectric properties and remanent polarization of the PSO\nthin films. The in-plane shear strains in the monoclinic PSO layer\nare attributed to oxygen octahedral tilts, resulting in misfit dislocations\nand grain boundaries at the PSO/SRO interface. Furthermore, the incoherent\ngrain boundaries between the orthorhombic and monoclinic phases are\nassumed to be the primary paths of Ag<sup>+</sup> filaments. Therefore,\nthe RS behavior is primarily dominated by antiferroelectric polarization\nand defect mechanisms for the PSO structures. The RS behavior of antiferroelectric\nheterostructures controlled by switching spontaneous polarization\nand strain, defects, and surface chemistry reactions can facilitate\nthe development of new antiferroelectric device systems.