Structural\nOptimization\nof Chalcogenide Thin Films\nfor Enhancing the Threshold Switching Performance

This\nstudy conducts a comprehensive investigation into\nthe physical\nproperties of germanium telluride (GeTe, GT) thin films and their\nassociated electronic devices to establish fundamental relationships\nthat are essential for achieving reliable threshold switching (TS)\ncharacteristics. Chemical composition variations in GT thin films\nsignificantly influence their crystallinity, atomic vibration modes,\nchemical binding status, bandgap, and distribution of electronic traps.\nThe increase in the tellurium (Te) content results in elevated Urbach\nenergy, subsequently reducing the effective bandgap energy. Excluding\nGT<sub>8</sub>, trap energy increases proportionally with increasing\nTe content. Correlating electrical properties with physical characteristics\nreveals key conditions necessary for stable TS behavior: maintaining\namorphous crystallinity, optimizing the chemical composition of the\nGT layer, and ensuring an appropriate bandgap and trap energy. These\nfindings underscore the importance of precise chemical composition\ncontrol for reliable TS performance. Insights from this study can\nguide nanoscale analyses of bonding structures in Te-based binary\nTS systems and present opportunities for material optimization across\nvarious applications.